The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Germanium-on-silicon waveguides are designed, fabricated and characterized with a novel near-field infrared spectroscopy technique that allows on-chip investigation of the in-coupling efficiency. On-chip propagation along bends and straight sections up to 0.8 mm is demonstrated around λ = 6 μm.
The detection and amplification of molecular absorption lines from a chemical weapons simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. A free-standing Si0.25Ge0.75 microbolometer detector with n-Ge plasmonic antenna is demonstrated as an integrated mid-infrared plasmonic sensor.
Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser thermal annealing to demonstrate activated doping levels >1020 cm−3 which allows most of the 3 to 20 μm mid-infrared sensing window to be covered with enhancements comparable to gold plasmonics.
Germanium-on-silicon rib waveguides are modelled, fabricated and characterized with a novel near-field infrared spectroscopy technique that allows on-chip investigation of the waveguide losses at 5.8 μm wavelength.
The detection and amplification of molecular absorption lines from a mustard gas simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. Approaches to integrated sensors will be presented along with a review of n-Ge compared to other mid-infrared plasmonic materials.
Despite the recent introduction of heavily-doped semiconductors for mid-infrared plasmonics, it still remains an open point whether such materials can compete with noble metals. We employ a whole set of figures of merit to thoroughly assess the use of heavily-doped Ge on Si as a mid-infrared plasmonic material and benchmark it against standard noble metals such as Au. In doing this, we design and...
We investigate the mid-infrared response of heavily doped germanium films and periodic arrays of nanoantennas by both continuous wave transmission/reflection spectroscopy and ultrafast pump-probe spectroscopy. We compare the data to finite-element modeling electromagnetic simulations of the subwavelength nanostructures. The plasma frequency of the doped or optically activated semiconductor extends...
We have observed plasmon cavity modes in a high-mobility two-dimensional electron gas by photocurrent spectroscopy in the 0.15–0.40 THz range. Spectral peaks due to standing wave nonlinearities are clearly observed.
Test structures comprehending several combinations of FET detector sizes and bow-tie antennas were designed and fabricated in a 0.13 µm standard CMOS technology. Measurement results from these structures provide a quantitative comparison basis for the design of a future real-time high-frame rate THz camera, providing an insight on the optimization of the FET size.
We have fabricated AlGaAs/InGaAs/AlGaAs heterostructure field effect transistors (HFET) with integrated on-chip antennas and we have measured their optical responsivity when mounted in a in-house developed quasi-optical package with a silicon substrate lens
We report on the fabrication and quasi-optical responsivity measurements of detectors of free-space terahertz radiation in a broad spectrum (0.18 – 0.72 THz). The detectors are modified compound-semiconductor heterostructure field-effect-transistors, coupled to integrated planar antennas.
We realized GaN based Field Effect Transistors to be used both for direct and heterodyne detection of mm wave / THz signals. Polarization-sensitive, planar antennas were designed and integrated on chip. Device were fabricated relying on an industrial III–V platform. Spectral response in the 0.22–0.38 THz range was acquired. An efficient mixing between gate voltage and drain current was shown.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.