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The detection and amplification of molecular absorption lines from a chemical weapons simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. A free-standing Si0.25Ge0.75 microbolometer detector with n-Ge plasmonic antenna is demonstrated as an integrated mid-infrared plasmonic sensor.
Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser thermal annealing to demonstrate activated doping levels >1020 cm−3 which allows most of the 3 to 20 μm mid-infrared sensing window to be covered with enhancements comparable to gold plasmonics.
The detection and amplification of molecular absorption lines from a mustard gas simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. Approaches to integrated sensors will be presented along with a review of n-Ge compared to other mid-infrared plasmonic materials.
Despite the recent introduction of heavily-doped semiconductors for mid-infrared plasmonics, it still remains an open point whether such materials can compete with noble metals. We employ a whole set of figures of merit to thoroughly assess the use of heavily-doped Ge on Si as a mid-infrared plasmonic material and benchmark it against standard noble metals such as Au. In doing this, we design and...
We have observed plasmon cavity modes in a high-mobility two-dimensional electron gas by photocurrent spectroscopy in the 0.15–0.40 THz range. Spectral peaks due to standing wave nonlinearities are clearly observed.
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