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Conventional spin-transfer torque random access memory (STT-RAM) is a promising technology due to its non-volatility and dense cell structure. However, the long switching time of magnetic tunneling junction (MTJ) limits the write speed of the STT-RAM. In order to improve the write performance, a Spin-Hall Effect (SHE) assisted STT-RAM structure (SHE-RAM) has recently been proposed [1]. SHE effect...
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