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This paper focuses on the characterization and performance evaluation of the Cu(In,Ga)Se2 (CIGS) thin films fabricated using the low-temperature pre-annealing process, followed by the plasma-enhanced Se vapor selenization coupled with etching (PESVSE) and thermal-assisted Se vapor selenization (TASVS). The XPS data reveals that the increase of pre-annealing temperature can facilitate the diffusion...
In this study, a novel plasma-enhanced Se vapor selenization coupled with etching (PESVSE) technique is demonstrated to achieve a uniform depth distribution of Ga in the Cu(In, Ga)Se2 (CIGS) film. The significant increase of Ga concentration on the surface of the CIGS film was ascribed to the removal of the excessive metallic-indium by the Ar-plasma during the PESVSE process and a single phase CIGS...
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