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The study examines the possibility of fabrication of pedestal oxynitride layers for high-k gate stacks by means of nitrogen implantation from r.f. plasma alone or followed immediately by the plasma oxidation process.The obtained layers were characterized by means of ellipsometry, X-ray photoelectron spectroscopy (XPS) and ultra low energy secondary ion mass spectrometry (ULE-SIMS). The results of...
The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical characterization methods.
Experiments presented in this work are a summary of the study that examines the possibility of fabrication of oxynitride layers for Si structures by nitrogen implantation from rf plasma only or nitrogen implantation from rf plasma followed immediately by plasma oxidation process. The obtained layers were characterized by means of: ellipsometry, XPS and ULE-SIMS. The results of electrical characterization...
Opisano badania mające na celu zweryfikowanie możliwości płytkiej implantacji jonów z wykorzystaniem plazmy RF i korelacji parametrów procesu implantacji z właściwościami podłoża krzemowego po tym procesie. Wpływ zaimplantowanych jonów węgla określono porównując parametry kondensatorów MOS na podłożu krzemowym domieszkowanym węglem i z parametrami kondensatrów wykonanych tą samą technologią na czystym...
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