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We show key design guidelines for three types of micro-ring modulators. We find that: (i) the dual-waveguide structure can have a 10-dB higher Q and is tolerant to long transit times, (ii) the induced peak shift can have an optimal value, and (iii) detuning before transmission can decrease penalty 10 dB further.
A graded-bandgap SiGe heterojunction bipolar transistor (HBT) is fabricated using Ge+ implantation. The maximum current gain and the maximum cutoff frequency are 40 and 8 GHz respectively, while those of the Si control device are 100 and 11 GHz. This relatively high cutoff frequency is obtained for the SiGe HBT despite considerable defects in the emitter and base regions, and is attributed to the...
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