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<para> Independent gate control in double-gate (DG) devices enhances circuit performance and robustness while substantially reducing leakage and chip area. In this paper, we describe circuit techniques which take advantage of the independent biasing properties of symmetrical and asymmetrical DG devices in design. DG circuits at the 25-nm node are analyzed via mixed-mode numerical simulations...
Independently-controlled double-gate devices using asymmetrical (n+/p+) gates are applied to the design of a novel VT-controlled voltage controlled oscillator (VCO). The VCO supports high operating frequencies and a wide tuning range. The back gates of the asymmetrical double-gate devices are used to modulate the threshold voltages of the front gate devices. A two-fold frequency tuning range is observed...
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