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We measured RTN characteristics in NAND flash cell array and test structure having 27 nm design rule depending on different program and erase states. From these measured results, we analyzed the trap properties along the active width direction from of NAND flash cell. Using special analysis methods, we verified the validity of this characterization tool and applied it to various processed NAND flash...
As the scaling in NAND Flash Memory is progressed, the various interferences among the adjacent cells are more and more increased and the new phenomenon which is ignored until now has to be considered. In this paper, we will introduce the new program interference phenomenon which is generated between the program word line and the adjacent word lines along the bit-line. This new program interference...
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