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Current unbalance in paralleled power electronic devices can affect the performance and reliability of them. In this paper, the factors causing current unbalance in parallel connected silicon carbide (SiC) MOSFETs are analyzed, and the threshold mismatch is identified as the major factor. Then the distribution and temperature dependence of SiC MOSFETs' threshold voltage are studied experimentally...
In high power applications of silicon carbide (SiC) MOSFETs where parallelism is employed, current unbalance can occur and affect the performance and reliability of the power devices. In this paper, factors which cause current unbalance in these devices are analyzed. Among them, the threshold voltage mismatch is identified as a major factor for dynamic current unbalance. The threshold distribution...
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