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A fully functional phase change memory (PCM) was fabricated and demonstrated that enables ultra low 0.3mA SET and 0.5mA RESET writing currents through a tungsten bottom electrode contact (BEC) with diameter of 90nm. This was achieved by integrating Si2Sb2Te5 (SST) storage material into 0.13um standard CMOS technology and resulted from the high electrical resistances of the novel chalcogenide both...
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