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In this paper, InP barrier was used instead of InAlAs barrier due to its better interface quality with gate oxides. The effects of different InP barrier thicknesses on device performance were investigated. We have also deposited different ALD gate oxides (single Al2O3, HfO2 and Al2O3/HfO2 bilayer) and studied the influence of various oxides on oxide/barrier interface and device characteristics.
Vertical In0.7Ga0.3As tunneling field-effect transistors are demonstrated with a high on-current of 50 μA / μm (in comparison to reported values) and a minimum subthreshold swing (SS) of 86 mV/dec using atomic-layer-deposited HfO2 gate oxide. The tunneling diodes exhibit the gate-bias-dependent Esaki diode behavior with a negative differential resistance under the forward diode bias at various temperatures,...
The scaling characteristics of self-aligned In0.53Ga0.47As n-MOSFETs with atomic layer deposited (ALD) Al2O3 and ZrO2 gate dielectrics are evaluated. Although ZrO2 shows promise of scalability to lower capacitance equivalent thickness (CET) compared to Al2O3, stacked bilayer Al2O3/ZrO2 gate dielectric enables further improvement in subthreshold swing and transconductance than single ZrO2 film. In...
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