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The scaling characteristics of self-aligned In0.53Ga0.47As n-MOSFETs with atomic layer deposited (ALD) Al2O3 and ZrO2 gate dielectrics are evaluated. Although ZrO2 shows promise of scalability to lower capacitance equivalent thickness (CET) compared to Al2O3, stacked bilayer Al2O3/ZrO2 gate dielectric enables further improvement in subthreshold swing and transconductance than single ZrO2 film. In...
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