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This paper presents a direct conversion RF receiver front-end supporting the WiMAX (802.16e) standard. The front-end is implemented in 0.5 um GaAs ED-Mode pHEMT technology and designed using the ADS software. It shows how the design flow can be accelerated starting from the standard specifications and going down to schematics. All this is accompanied by test benches to extract the relevant metrics...
In this work, two enhancement-mode (E-mode) GaAs-based high electron mobility transistors (HEMTs), grown by molecular beam epitaxy (MBE) system, have been fabricated and investigated. We evaporated traditional platinum (Pt) and palladium (Pd) as Schottky contact metals to observe high-temperature performance. Following the 1 mum Pt/Ti/Au gate and Pd/Ti/Au gate metals deposition, the devices were thermally...
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