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The GaN/AlGaN active regions for terahertz (THz) quantum cascade lasers were grown by metal organic chemical vapor deposition (MOCVD). The surface of the sample was characterized by atomic force microscopy (AFM). The structure of this sample was evaluated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The XRD pattern and cross-sectional TEM images showed that a well-controlled...
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