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In this study, a global transient numerical simulation of silicon growth from the beginning of the solidification process until the end of the cooling process is carried out modeling the growth of an 800kg ingot in an industrial seeded directional solidification furnace. The standard furnace is modified by the addition of insulating blocks in the hot zone. The simulation results show that there is...
In this study, the installation of insulation blocks in the hot zone is utilized to assist in the growth of multi-crystalline silicon ingots with 800kg of silicon charge using the seeded directional solidification method. A transient global numerical simulation is carried out to investigate the heat and mass transport during growth process. At a higher solidification fraction, lower concavity of the...
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