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The early stages of GaN(0001) epitaxial growth are modeled using a lattice-based kinetic Monte Carlo simulation. The simulation explicitly includes both the constituent atoms and is performed on the wurtzite crystal structure of GaN. The deposition flux is chosen to mimic conditions in a molecular beam epitaxy chamber. The surface diffusion barriers used for the growth simulation are obtained from...
A lattice based kinetic Monte Carlo (kMC) simulation is developed to describe growth of GaN(0001) in conditions typical of a molecular beam epitaxy unit. Deposition and surface diffusion via attachment and detachment of atoms are the main processes considered in this model. The energy barriers for surface diffusion are estimated from ab‐initio density functional theory calculations.
From the ab‐initio...
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