The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Growth of Cu(In,Ga)Se2 (CIGS) absorbers under Cu‐poor conditions gives rise to incorporation of numerous defects into the bulk, whereas the same absorber grown under Cu‐rich conditions leads to a stoichiometric bulk with minimum defects. This suggests that CIGS absorbers grown under Cu‐rich conditions are more suitable for solar cell applications. However, the CIGS solar cell devices with record efficiencies...
A lattice based kinetic Monte Carlo (kMC) simulation is developed to describe growth of GaN(0001) in conditions typical of a molecular beam epitaxy unit. Deposition and surface diffusion via attachment and detachment of atoms are the main processes considered in this model. The energy barriers for surface diffusion are estimated from ab‐initio density functional theory calculations.
From the ab‐initio...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.