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The early stage of 3C-SiC nucleation and islands enlargement on on-axis 6H-SiC(0001¯) (C face) were studied by changing the conditions of interaction of a Si 0.25 Ge 0.75 melt with the SiC substrate. After changing the temperature or the plateau duration at a fixed temperature, evolution in terms of shapes and sizes of the 3C-SiC islands was found. The observed islands enlargement...
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