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III–V nanowires (NWs) on Si are promising building blocks for future nanoscale electrical and optical devices on Si platforms. We present position-controlled and orientation-controlled growth of InAs, GaAs, and InGaAs NWs on Si by selective-area growth, and discuss how to control growth directions of III–V NW on Si. Basic studies on III–V/Si interface showing heteroepitaxial growth with misfit dislocations...
We grew InAsP and InP/InAsP/InP heterostructure NWs (NWs) by selective-area MOVPE and carried out micro-photoluminescence (μ-PL) measurement. We investigated growth conditions for InAsP NWs and that embedded in InP NWs, and obtained exciton and biexciton emissions from InAsP QDs at optimized growth conditions. Negative binding energy of biexciton was observed due to the strong Coulomb interaction...
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