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This paper reports on the conduction mechanisms and trapping effects in SiO2/4H-SiC MOS-based devices subjected to post deposition annealing in N2O. In particular, the anomalous Fowler-Nordheim (FN) tunnelling through the SiO2/4H-SiC barrier observed under consecutive reverse bias sweeps was studied by temperature and time dependent gate current measurements. The excess of gate current with respect...
Silicon carbide (SiC) and gallium nitride (GaN) are excellent wide band gap materials for power electronics. In spite of the significant progresses achieved in the last years, there are several issues limiting the performances of the developed devices. As an example, interfaces in SiC and GaN-based structures represent still one of the major concerns. Among them, metal/p-type SiC (or GaN) interfaces...
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