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Gallium arsenide (GaAs) microstructures have been prepared by electrochemical anodic etching of GaAs substrate in an aqueous solution of H3PO4 (85 wt %): H2O2 (30 wt %): H2O = 1: 2.5: 8. (NH4)2S solution was chosen to passivate the surface of GaAs micrcostructures. The surface morphology of microstructures were characterized by Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM)....
A simple chemical route for ZnS passivation on gallium arsenide (GaAs) and the optical properties of GaAs surfaces is characterized in this paper. From the photoluminescence (PL) mapping and X-ray Photoelectron Spectroscopy (XPS) results, the treatment process by ZnS is quite effective to remove the oxide layer of GaAs, increases the photoluminescence intensity of GaAs. This study shows that ZnS-coating...
The facet coating passivation characteristic of 905nm laser diode is presented by researching catastrophic optical mirror damage (COMD) mechanism of laser diode. In the research, 905nm laser diode are cleaved in the high vacuum cleaving system, and then coated with 3.5nm and 4.5nm Si passivation film in the front and the back facet. Lastly optical films are then applied to the antireflection (AR)...
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