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Fixing the doping dosage in VT implant process, as the doping energy is lower; contributing the good p-n junction controllability, the punch-through voltage (VPT) at 6keV doping energy is greater than that at 10keV, no matter what the long-channel devices are. This phenomenon is similar to the trend of the DIBL values for channel width = 0.12μm at 10keV are slightly larger than that at 6keV, too.
The micro-loading effect in this work seems obviously. According to the extraction of drive current (IDS) for dense and isolated FinFET devices at the on-drawn layout (W/L=0.11/0.5 (μm/μm), the ratio with 11-fin fingers vs. single fin was 10.01. Using the re-work concept to derive the un-etching depth (ΔH) located at the inner sidewall fin height was still around 2.4 nm as the outer sidewall height...
Higher threshold-voltage (VT) doping energy provides the deeper influence to channel controllability. For drive current (IDS) consideration, the higher one demonstrates the larger IDS value, but the higher drop ratio at 125°C comparing the measurement results at channel width/channel length (W/L)=0.11/0.5(μm/μm). However, this phenomenon at W/L=0.11/2(μm/μm) is not distinct at room temperature and...
The drive current under the higher doping energy in threshold voltage (VT) adjustment shows the higher performance. Simultaneously, this consequence in VT shift under heating effect also reflects the same trend. The deviation ratios at 20KeV and 15KeV doping energies are about 26% and 28%, respectively. The subthreshold swing (S.S.) at higher doping energy is slightly lower than that at higher one...
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