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This paper reports the fabrication, measurement and discussion about the nanosolenoid inductors for high frequency applications as much as 40 GHz, taking advantage of a much smaller size compared with traditional microinductors. Three small size nanosolenoid inductors are fabricated, such as a nanosolenoid inductor with a diameter of 4.8 um, pitch of 10 um, length of 22 um. The nanohelix inductors...
This paper describes a microhelix inductor structure fabricated with focused ion beam(FIB) stress introducing technology(SIT). With the decrease of the implantation does, the pitch and the diameter of the microhelix inductors decreases, which will also affect the performance of the microinductors. Microhelix inductors with different scales are fabricated from 120 nm thick, 2 um wide, 41um long aluminum...
A leading edge 32 nm high-k/metal gate transistor technology has been optimized for SoC platform applications that span a wide range of power, performance, and feature space. This technology has been developed to be modular, offering mix-and-match transistors, interconnects, RF/analog passive elements, embedded memory, and noise mitigation options. The low gate leakage of the high-k gate dielectric...
This paper reports a novel suspended nanoscale solenoid metal inductor with inductance of several tens-nH for analog-circuit and radio-frequency application. The nanoscale inductors consist of three-dimensional aluminum or gold nanohelices, which are transformed from nanometer thick metal cantilevers by focused-ion-beam stress-introducing technology. For the inductor with a two-turn helix conductor,...
The advances of semiconductor technology are mainly due to the advances of polymeric materials. These include the use of polymers as adhesives (both conductive and non-conductive), interlayer dielectrics (low-k, low loss dielectrics), encapsulants (discrete and wafer level packaging), embedded passives (high-k and high-Q materials), superhydrophobic self-cleaning lotus effect surfaces, and etc. In...
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