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A simple quasi-optical design for LO coupling in the quasi-optical heterodyne system has been described. Due to the limited LO power available at THz bands, it is of great importance to achieve high efficiency LO power coupling to the mixer. Two elliptical mirror have been employed to couple the LO power to the SIS mixer. Measurement at nearly 500GHz shows such configuration is sufficient to pump...
Superhydrophobic surface, inspired by lotus leaf, has aroused intensive interest in research and application on insulators and transmission lines. To improve the superhydrophobicity of composite insulators, they were subjected to surface fluorination in a laboratory vessel using F2/N2 mixture (20% F2 in vol. %) under 0.1Mpa for 30 min at 25, 40, and 55° C, respectively. A dual nano- and micro-scale...
This paper presents the development of high-gain, wide-bandwidth, W-band LNA integrated circuits utilizing a novel 0.25 μm InP/Si BiCMOS process with Ft/Fmax of 330/270 GHz. A 4-stage microstrip LNA achieves a minimum NF of 5.7 dB at 92 GHz and remains less than 7.2 dB (6.4 dB avg.) across a 75–100 GHz bandwidth. The LNA also exhibits a peak gain of 27.7 dB, a 3-dB bandwidth of 18 GHz (80–98 GHz),...
We report on the transport properties of Si nanowire (NWs) field effect transistor (FET) structures studied before and after gamma radiation treatment. Measured I-V characteristics and noise spectra of Si NW FETs of different lengths demonstrate improved stability and scaling after irradiation treatment. The results are interpreted with respect to strain relaxation in contact regions as well as changes...
A magnetically shielded setup was developed for characterizing magnetoresistance (MR) and noise properties of magnetic tunneling junction (MTJ) sensors. A mu-metal shielding is installed to avoid the interference of external magnetic disturbance. Both MR curves and noise power spectra of MTJ sensors can be obtained for further data analysis. Moreover, a hard-axis magnetic field can be applied to eliminate...
This paper presents a fully integrated GPS receiver with 2.4 dB NF, 1.2mm2 area, and 13 mA of current in 55 nm CMOS. NF degrades by only 0.1/0.5/0.1 dB in the presence of GSM, DCS, and WiFi blockers respectively. By using current mode operation, push-pull topology, current reuse techniques, and modular Gm-TIA stages, area is about half and power is about 1/3 of previously published GPS receivers while...
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