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In a heat-assisted magnetic recording (HAMR) system, the optical recording head is one of the essential components, where light delivered from waveguide is focused into an optical spot in the scale of tens of nanometers to heat recording media to lower coercivity temporarily and locally by a near-field optical transducer. High transducer efficiency is desired for HAMR, as large energy lost during...
We report time-domain measurements of nonlinear dynamics of picosecond pulses in silicon. The dispersion-engineered photonic crystal enables our systematic investigation of dynamic interplay between dispersion, free-carriers, and χ(3) effects for a broad parameter range.
A high-Q SiN microresonator is used for the first time as an optical source for WDM transmission with advanced modulation formats. We transmit QPSK and 16QAM signals with a total bit rate of 392 Gbit/s.
We show how slow-light enhanced four-wave mixing in dispersion engineered photonic crystal waveguides can result in ultra-compact devices enabling different applications, namely time-division demultiplexing of 160Gbaud data streams and the generation of correlated photon pairs.
Silicon represents a mature, affordable platform for fabricating electronic and optical signal processing devices. We discuss all-optical 170 Gbit/s switching, a 42 Gbit/s electro-optic modulator, and proof-of-concept results for a surface plasmon polariton absorption modulator.
We report FWM (−9dB conversion) in a short (80μm) silicon dispersion engineered slow (c/30) light photonic crystal waveguide through launching a pulsed pump and a CW probe signal.
A 40 Gbit/s electro-optic modulator is demonstrated. The modulator is based on a slotted silicon waveguide filled with an organic material. The silicon organic hybrid (SOH) approach allows combining highly nonlinear electro-optic organic materials with CMOS-compatible silicon photonics technology.
All-optical wavelength conversion of 56 Gbit/s NRZ-DQPSK based on four-wave mixing is demonstrated in a silicon-organic hybrid strip waveguide operated in TM mode.
Quasi-TM-mode propagation loss of 1.83 dB/cm at lambda = 1.565 mum is achieved in horizontal Si(amorphous)-SiO2-Si(crystalline) slot waveguides with 8.3 nm slots fabricated on silicon-on-insulator. Waveguide loss is measured using a ring resonator with Q ~ 3x105.
Two extreme contrasts in ultrafast laser writing of optical waveguides are explored: heat accumulation effects at high (~1-MHz) repetition rate for generating smooth waveguides and periodic Bragg-grating waveguides generated with 1-kHz rate lasers
Resonance in a metal-insulator-metal waveguide mode is shown to lead to significant field enhancement and hence surface-enhanced Raman scattering. The results from the propagating waveguide model are consistent with experimental and numerical results.
50 W peak-power was demonstrated from 2-mm-long, 100-/spl mu/m-aperture AlGaAs/InGaAs/GaAs single-quantum-well lasers driven with 40-ns, 80-A current pulses. Grown by organo-metallic vapor-phase epitaxy, the lasers have internal losses of 1.5 cm/sup -1/ and internal efficiencies of 0.90.
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