The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
FinFET has become the mainstream logic device architecture in recent technology nodes due to its superior electrostatic and leakage control [1,2,3,4]. However, parasitic capacitance has been a key performance detractor in 3D FinFETs. In this work, a novel low temperature ALD-based SiBCN material has been identified, with an optimized spacer RIE process developed to preserve the low-k value and provide...
We propose a new technique for femtosecond pulse characterization — transient-grating self-referenced spectral interferometry. Using this technique, we built an extremely simple, alignment-free device and successfully sub-two-cycle 10-fs pulses at 1.75 μm.
This paper reviews a technology for making nano-engineered optical fibers. Key features and advantages of nano-enginneered glass fibers are discussed. Fiber designs and their applications are presented.
This paper describes SRAM scaling for 32 nm low power bulk technology, enabled by high-K metal gate process, down to 0.149 mum2 and 0.124 mum2. SRAM access stability and write margin are significantly improved through a 50% Vt mismatch reduction, thanks to HK-MG Tinv scaling. Cell read current is increased by 70% over Poly-SiON process. Ultra dense cell process window is expanded with optimized contact...
X-ray based spectroscopies have been used to study nanocluster formation and luminescence in silicon oxynitride-based materials. For a luminescent Ce-doped silicon oxide details of the local chemical environment of the Ce atoms has been obtained.
We report a successful implementation of epitaxially grown Phosphorus-doped (P-doped) embedded SiC stressors into SOI nMOSFETs. We identify a process integration scheme that best preserves the SiC strain and minimizes parasitic resistance. At a substitutional C concentration (Csub) of ~1.0%, high performance nFETs with SiC stressors demonstrate ~9% enhanced Ieff and ~15% improved Idlin against the...
Quasi-TM-mode propagation loss of 1.83 dB/cm at lambda = 1.565 mum is achieved in horizontal Si(amorphous)-SiO2-Si(crystalline) slot waveguides with 8.3 nm slots fabricated on silicon-on-insulator. Waveguide loss is measured using a ring resonator with Q ~ 3x105.
A 64/spl times/64 element kinoform was microfabricated in fused silica by direct ablation with a pulsed 157-nm laser source that circumvents multistep lithographic patterning and etching routines. A 4-level design of /spl sim/300-nm etch layers is described.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.