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A model for filamentary conduction in RRAMs based on Metal-Insulator-Metal (MIM) structures has been developed. The model describes RRAM resistive switching processes by calculating the formation and rupture of conductive filaments (CFs) in the dielectric. The resistance of the electrodes, of the CF and the hopping current in the gap between the CF tip and the electrode, are taken into consideration...
Two different compact models for resistive RAM (RRAMs) with filamentary conduction are compared in depth. One model describes RRAMs where conductive filaments (CFs) change their geometry laterally while the other model takes into consideration vertical variations of the CF. The role of the conductive filament (CF) ohmic resistance and the temperature evolution is carefully studied. The models have...
Three different compact models for resistive RAM are introduced in this work. The role of the conductive filaments ohmic resistance is introduced for different filament shapes, affecting the voltage at the gap between the filament tip and the electrode, and therefore the device hopping current. The temperature behavior of the devices under study is also described with a different degree of accuracy...
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