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Wafer fusion is a powerful technique in integrating heterogeneous materials. The most well known example is silicon-on-insulator (SOI), and the more recent success is the hybrid silicon laser. Most often the fused interface is incorporated in a device structure where its electronic properties are not crucial to the device performance, considering this interface is normally more defective than epitaxial...
This paper describes a comparative study on device characteristics of short-gate AlGaN/GaN HFETs with extremely thin SiN films deposited by different methods on the AlGaN surfaces. SiN deposition on an AlGaN surface greatly increases ns regardless of the deposition method, and it is useful to fabricate highly-scaled GaN HFETs for high-frequency applications. However, specific device characteristics...
In this paper, we present our development of a novel HEMT which uses V-shaped gate geometry to reduce the field crowding at the gate edge, and pushes the high power performance of the deeply recessed HEMTs toward higher operating voltages. The V-gate GaN HEMTs were fabricated by using a highly manufacturable approach, and demonstrated X-band power performance superior to devices made by other technologies.
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