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We investigated how high permittivity materials affect the S-parameters and transmit efficiency of a head-sized birdcage coil. We also studied whether re-tuning and matching are necessary for improved performance. While adjusting the S-parameters is possible during coil development and for prototype coils, it is often unfeasible to re-tune and match commercially manufactured coils, and poses a challenge...
Vacuum surface flashover switches based on polymers of polyimide (PI), polymethyl methacrylate (PMMA), and monomer cast Nylon as well as fused quartz are respectively designed and tested under condition of charge time 30 μs. The experimental results show that the PI switches are of the highest breakdown voltage and lifetime among the three types of polymers. For breakdown voltage of 416 kV, which...
The effects of fluorination on the vacuum surface flashover voltage (Uf) of polyimide (PI) are researched. The experimental results show that as the degree of fluorination increases, the Uf of PI firstly increases and then decreases, the highest Uf in the experiments is increased by up to 21 % compared with untreated PI sample. The results of Fourier-transform infrared spectroscopy (FTIR) and X-ray...
The general regularities of the electric surface flashover threshold (Ef) of polymers immersed in transformer oil and the polymers' bulk breakdown threshold (EBD) versus pulse width (τ) are obtained respectively by summarizing the experimental data in literatures. Those regularities are that Ef is proportional to τ−1 and that EBD is proportional to τ−1 when τ is smaller than 30 ns, when τ is larger...
A superjunction (SJ) VDMOS with a high- (HK) dielectric pillar below the trench gate is proposed and investigated by simulation. The HK dielectric causes a self-adapted assistant depletion of the n pillar. This not only increases the n-pillar doping concentration and thus reduces the specific on-resistance but also alleviates the charge-imbalance issue in SJ devices. The...
P-MOSFETs with HfO2 gate dielectric and TiN metal gate were fabricated on compressively strained SiGe layers with a Ge content of 50 at.% and electrically characterized. The devices showed good output and transfer characteristics. The hole mobility, extracted by a split C-V technique, presents a value of ~200 cm2/V·s in the strong inversion regime.
Integration of lanthanum lutetium oxide (LaLuO3) with a κ value of 30 is demonstrated on high mobility biaxially tensile strained Si (sSi) and compressively strained SiGe for fully depleted n/p-MOSFETs as a gate dielectric. N-MOSFETs on sSi fabricated with a full replacement gate process indicated very good electrical performance with steep subthreshold slopes of ~72 mV/dec and Ion/Ioff ratios up...
CMOS devices with high-k/metal gate stacks have been fabricated using a gate-first process flow and conventional stressors at gate lengths of 25 nm, highlighting the scalability of this approach for high performance SOI CMOS technology. AC drive currents of 1630muA/mum and 1190muA/mum have been demonstrated in 45 nm ground-rules at 1V and 200nA/mum off current for nFETs and pFETs, at a Tinv of 14...
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