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A monolithic double-pole, five-throw (DP5T) band switch has been implemented and fabricated in a 180nm thick-film partially-depleted (PD) SOI CMOS technology for the cellular handset multi-band applications. To reduce the power dissipation and eliminate the interaction between charge pump and RF-core circuitry, a novel switch configuration without integrating the negative voltage generator (NVG) is...
An enhanced electrostatic discharge (ESD) power clamp for an antenna switch controller with silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology is presented. The gate drive voltages of larger n-type metal-oxide-semiconductor transistors in a stacked configuration of a RC-triggered power clamp have been optimised to obtain larger discharging capability and shorter turn-on...
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