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The bandgap of epitaxial graphene thermally grown on 4H–SiC(0001) can be widened via a novel charge transfer mechanism by modifying the buffer layer and surface of SiC with substrate doping before epitaxial graphene growth. High-resolution photoemission spectroscopy base on synchrotron radiation reveal that the bandgap broadening of epitaxial graphene is attributed to modification of buffer layer...
Electrical double layer supercapacitors (EDLC) have an upper limit for their area-normalized capacitance (CA) and lead to a bottleneck that impede the commercialization of high-energy-density supercapacitor devices. Quantum capacitance (CQ) in series with electrical double layer capacitance (CEDL) has been demonstrated to be a tremendous obstacle for enhancing the CA of EDLC. Nitrogen doping can up-shift...
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