The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, we propose Residual Attention Network, a convolutional neural network using attention mechanism which can incorporate with state-of-art feed forward network architecture in an end-to-end training fashion. Our Residual Attention Network is built by stacking Attention Modules which generate attention-aware features. The attention-aware features from different modules change adaptively...
On-chip electrostatic discharge (ESD) protection are required for all ICs. Unfortunately, ESD-induced parasitic capacitance (CESD) will seriously affect performance of high-speed and RF ICs. Careful design balance of ESD protection level and minimizing ESD-induced circuit performance degradation has become a major design challenge for high-speed and RF ICs. This paper presents a comprehensive study...
Dynamically tunable characteristics of a heterojunction between two semiconducting materials offers the potential for building reconfigurable devices that can enable novel functionalities in electronic systems [1-3]. In this work, we study a novel junction between black phosphorus (BP) and tin selenide (SnSe), both with puckered orthorhombic crystal lattices. Due to the narrow bandgap of BP ∼0.3 eV...
In this work, we study the effects of rapid thermal annealing (RTA) on HfO2 and HfSiOx gate dielectrics. The film electrical characteristics, TDDB reliability, breakdown characteristics and mechanism, and the optimum temperature of N2 RTA treatment were investigated. We also propose a model to explain breakdown mechanism and the difference between HfO2 and HfSiOx dielectrics. For lifetime projection...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.