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This study investigates the characteristics of zinc oxide (ZnO) film in a resistive random-access memory (RAM) (RRAM) with aluminum as the top and bottom electrodes. The effect of oxygen content on the electrical performance of the ZnO film is evaluated using O2/(Ar+O2) gas flow ratios of 16%, 25%, and 33%. From experimental results, the ZnO RRAMs with an oxygen-gas flow ratio of 33% reveals the lowest...
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