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A test chip for studying electromigration (EM) effects under various dc and ac stress conditions was implemented in a 32-nm-high-k metal gate process. The stress current, which can be either dc, pulsed dc, square ac, or real ac, was generated on-chip and applied to 60 devices under test (DUTs) in parallel. An on-chip voltage-controlled oscillator was designed to generate a stress frequency higher...
A test circuit for studying Electromigration (EM) effects under realistic high frequency AC stress was implemented in a 32nm High-k Metal Gate (HKMG) process. Four different stress patterns (DC, pulsed DC, square AC and real AC) can be generated using on-chip circuits. Local heaters are used to raise the die temperature to >300°C for accelerated testing. Experiment results over 52.7 hours show...
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