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This article presents the full design methodology and implementation of inverse Class‐F power amplifier with a commercial high‐power GaN HEMT. For a 3.48 GHz continuous wave signal, the measurement results show state‐of‐the‐art power‐added‐efficiency (PAE) of 76.7%, drain efficiency of 81.1%, gain of 12.9 dB, and output power of 39.9 dBm. Within a bandwidth of 200 MHz, drain efficiency and output...
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