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The lattice parameter and thermal expansion coefficient mismatch between the silicon substrate and GaN lead to high tensile stress, which makes the GaN epitaxial layer prone to cracking. Effective compensation of tensile stress on GaN to prevent cracking is an important issue in GaN epitaxial growth. In this work, GaN‐on‐silicon materials with different AlGaN buffer layer structures are prepared by...
The effect of the InGaN channel on the performance of high‐electron‐mobility transistors (HEMTs) through the Silvaco Atlas simulator is investigated in detail. It is shown that the 2D electron gas (2DEG) density and carrier confinement of the device can be enhanced by replacing the GaN channel with the InGaN channel. The higher 2DEG density significantly increases the saturation drain current density,...
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