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The sub-millimeter wave amplifier MMIC with flip-chip mounting on polyimide substrate has been realized. The thickness of the substrate and the pitch of GND vias are designed to suppress the air radiation from the slot pattern in the substrate. The test results of the micro-strip line formed on the polyimide substrate shows that the design is applicable to the assembly operated up to 320 GHz. The...
In this paper, we present the development of J-band amplifier in 75-nm InP HEMT technology. The circuit utilizes a six-stage common-source amplifier. An inverted microstrip line (IMSL) structure is employed for matching networks of the amplifier. The developed amplifier realizes a small signal gain of 17.3 dB and a 3-dB band width of 35 GHz from 254 GHz to 289 GHz.
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