The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Phase change memory (PCM) is a promising candidate for next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) and graphene as interconnects to induce phase change in ultra small regions (~20 nm) of Ge2Sb2Te5 (GST), we are able to build ultra-low power PCM devices. Normal memory operations are demonstrated with exceptionally...
In this paper, we have shown that CNT (carbon nanotubes) electrodes enable control of extremely small, ~10 nm volumes of phase change materials (e.g. GST - Ge2Sb2Te5). Reversible SET and RESET programming currents as low as 1-10 μA can be achieved, two orders of magnitude lower than state-of-the-art PCM devices.
Phase-change memory (PCM) is a promising candidate for non-volatile data storage. In this study, a key step in this area, by inducing ultra-narrow (5-10 nm) phase-change regions with individual single-wall carbon nanotube (SWNTs) heaters, and programming currents of the order 10 ??A was demonstrated. Electrical measurements of such devices show step-like increases in current (up to 15 ??A steps) that...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.