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Through Silicon via (TSV) technology makes the stacked chip to achieve the shortest distance of interconnection in vertical direction (z direction). However, there are many challenges for TSV wafer processes. One of the challenges is TSV wafer backside grinding process. In this paper, a predictive model was introduced to calculate the normal grinding force, and a dynamic finite element modeling methodology...
Backside grinding is the most commonly used technique in silicon wafer thinning. The grinding damage may cause degradation of mechanical property and induce residual stress. In this paper, bugle test is proposed to apply to ground wafer. Before the experimental work starts, the theoretical model needs to be built. A numerical model is also adopted to verify the applicability of the theoretical model,...
Interfacial delamination between molding compound (MC) and die pad interface is the most crucial failure mechanism of exposed pad package under reliability testing due to high interfacial stress and weak adhesion strength. A combined interfacial adhesion characterization, JEDEC Moisture Sensitivity Level 3 and 3X IR reflows qualification and testing, finite element analysis as well as finite element...
Warpage, high stress in dies and solder joints are introduced in assembly process of a package-on-package component. In this paper, a finite element approach is proposed to predict the warpages and stresses during the full assembly process. By the techniques of element die and birth as well as restart method, the approach is able to transfer the stress and warpage in one process to the next so that...
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