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In this study, transparent Li–N co-doped ZnSnO (ZTO: (Li, N)) thin film transistors (TFTs) with a staggered bottom-gate structure were fabricated by radio frequency magnetron sputtering at room temperature. Emphasis was placed on investigating the effects of post-annealing temperature on their physical and electrical properties. An appropriate post-annealing temperature contributes not only to achieving...
Polyboronsilazane (PBSZ) precursors for SiBCN ceramics were prepared by using 9-borabicyclo-[1,3,3] nonane (9-BBN) and copolysilazanes (CPSZ) as starting materials, involving the hydroboration reaction between vinyl groups of PSZ and BH groups of 9-BBN under mild conditions. The as-synthesized PBSZ was obtained as a soluble liquid, which was characterized by FT IR and NMR. The polymer-to-ceramic conversion...
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