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We present our recent researches on novel group IV nano- and micro-structures for potential light sources on Si, including the tensile strained Ge quantum dots (QDs), GeSn thin films and microstructures, and Ge(Sn) nanowires. Tensile-strained Ge QDs were grown by SS-MBE, and photoluminescence was achieved. The GeSn thin films were demonstrated with Sn concentration above the bandgap transition critical...
LEDs are subjected to environments with high moisture in many applications. In this paper, the experiments reveal photometric and colorimetric degradation at high humidity. Corresponding spectral power analysis and parameter extraction indicate that the flip-chip bonded LED samples show accelerated chip failure compared to the conventionally bonded samples. The chip-related failure induces greater...
High-power Light Emitting Diode (LED) generates significant amount of heat fluxes that can affect the temperature-dependent properties of the device. This self-heating effect can upset the measurement setup and produce inaccurate readings, leading to misinterpretation of results such as electrical and thermal resistances. Optical, electrical and thermal performances of high-power LED packages were...
MM'X (M, M' = transition metals, X = Si, Ge, Sn) intermetallic compounds have been recently concerned due to magnetoresponsive effects [1-5], for instance, field-induced martensitic transition (MT) and giant magnetocaloric effect (MCE). For stoichiometric MM'X compounds, structural transition and magnetic transition cannot been coupled. In recent years, many effective methods have been used to achieve...
The anomalous Hall effect in ferromagnetic materials has attracted much attention for more than a century due to its physical complexity and important applications. Depending on its origin, this effect has been explained by three typical mechanisms: intrinsic contribution [1], skew scattering [2], and side jump [3], which cause exponential dependences with different power indexes between the extraordinary...
We report on THz emission measurements and low temperature scanning laser imaging of Bi2Sr2CaCu2O8 intrinsic Josephson junction stacks. Coherent emission is observed at large dc input power, where a hot spot and a standing wave, formed in the “cold” part of the stack, coexist. By changing bias current and bath temperature the emission frequency can be varied over a wide range of 350–780 GHz; the variation...
With the large amount of greenhouse gas emission, the greenhouse effect causes the atmospheric temperature to be a higher level and more extreme climate happens. One Limb sequence data, MIPAS L1 data, were used to reverse the one-dimensional atmospheric profile. The results are compared with the MIPAS L2 temperature data products from the same L1 data of MIPAS. The differences between the reversed...
We present an attractive poly-SiGe thin film packaging and MEM (Micro Electro-Mechanical) platform technology for integrating various packaged MEM devices above standard CMOS. The packages, having cavities as large as 1 mm2, make use of pillars designed to withstand subsequent molding during 1st level packaging. Covers on top of the release holes avoid deposition inside the cavity during sealing....
The impact of device temperature variations on the modulation response of an injection-locked Quantum-Dash laser is analyzed. Lower slave operating temperatures result in a large reduction in the undesirable pre-resonance dip in the modulation response.
Laser non-contact precision measuring method of CNC machine tools under the high feed rate condition was put forward. The method combines the laser interferometer with the measurement principle of the double ball bar (DBB), and can measure the machine tool precision under the high feed rate condition. Two laser interferometers used as measuring the displacements and feed rate data along circular interpolation...
In this paper, a three-dimensional (3D) eddy current field model to calculate the eddy current losses in an isolated phase bus is proposed. The temperature rises of the conductors and enclosures in the isolated phase bus are evaluated using the proposed set of thermal equations. Good agreement between the computed and test results is a good validation of the proposed methodology.
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