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A comprehensive study of the chemical composition, structural and electronic properties of antimony adsorption layers on the p–type SiC(0001) surfaces are presented in this report. All processes and measurements were performed in situ under ultrahigh vacuum conditions. Electron affinity of the cleaned substrate, determined by ultraviolet photoelectron spectroscopy (UPS), amounted to 2.8 eV. The (1 × 1)...
The electrical properties and interface chemistry of Cr/6H-SiC(0001) contacts have been studied by current-sensing atomic force microscopy (CS-AFM) and X-ray photoelectron spectroscopy (XPS). Cr layers were vapor deposited under ultrahigh vacuum onto both ex situ etched in H 2 and in situ Ar + ion-bombarded samples. The Cr/SiC contacts are electrically non-uniform. Both the measured...
Hydrogen etching was carried out on the (0001)-oriented 6H–SiC wafer at various temperatures in the range from 1450 to 1650 °C. Surface topography and morphology was characterized by the atomic force microscope (AFM). Optimal conditions have been found, under which all scratches due to the polishing process are efficiently removed and the atomically smooth, clean surface of SiC(0001) is achieved....
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