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SRAM paves the way for new technology nodes as it is more prone to failure due to intrinsic devices variability and technology process. To further boost high density SRAM yield and performance we need assist techniques and increased SRAM bit cell size at the expense of area. This paper discusses SRAM design strategies for future technologies nodes like beyond the N7 node, by comparing higher height...
As scaling continues for FinFET technology nodes, variability in combination with targeted lower supply voltages results in reduced SRAM stability margins. In this paper, threshold voltage tuning from the technological side is used to enable low SRAM Vmin with minimum impact on logic performance. Furthermore, lower overall system energy consumption can be achieved by the lower Vmin. This exercise...
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