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We present design of plasmonic modulators using vanadium dioxide (VO2) as modulating material realized on silicon-on-insulator (SOI) wafer with only 200 nm × 140 nm modulating section within 1 μ m × 3 μm device footprint. By utilising the large refractive index contrast between the metallic and semiconductor phases of VO2, the modulator can achieve a broad working wavelength range from 1100 to 1800...
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