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Interfacial Atomic Configurations
In article number 2106814, Kaihui Liu, Xin‐Zheng Li, Xinqiang Wang, and co‐workers profile a novel perspective of the lattice arrangement (polarity) manipulation of a quasi‐van der Waals epitaxial hexagonal III‐nitride film on graphene by interfacial atomic configuration engineering. Through using atomic O preirradiation and a specific supply sequence of Ga and N...
Quasi van der Waals epitaxy, a pioneering epitaxy of sp3‐hybridized semiconductor films on sp2‐hybridized 2D materials, provides a way, in principle, to achieve single‐crystal epilayers with preferred atom configurations that are free of substrate. Unfortunately, this has not been experimentally confirmed in the case of the hexagonal semiconductor III‐nitride epilayer until now. Here, it is reported...
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