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The 4th generation wireless standard is ushering an era of ubiquitous connectivity. The convergence of data and voice to a portable media device is producing an explosive demand for high data rate communication. Such convergence requirements along with the need for improved battery life, smaller form factor, and reduced cost will demand new ways of system integration. The RF front-end-modules (FEM)...
For the European XFEL at DESY in Hamburg (Germany) a klystron modulator prototype is built, based on the proven so called ldquoBouncerrdquo principle. Although it is a well known technique, the bouncer modulator faces some difficulties on flattop stability and protection of the klystron. In this paper improvements for these problems are presented. Besides a chosen solution for constant input power...
This paper describes a single pole, single throw (SPST) 180 nm CMOS thin film SOI switch developed for the most difficult cellular and 802.11x RF switch applications. We will show that power handling, linearity, insertion loss, isolation and switching times are competitive with switch applications utilizing GaAs pHEMT and silicon- on-sapphire technologies.
This paper describes a 180 nm CMOS thin film SOI technology developed for RF switch applications. For the first time we show that the well-known harmonic generation issue in HRES SOI technologies can be suppressed with one additional mask. Power handling, linearity, and Ron*Coff product are competitive with GaAs pHEMT and silicon-on-sapphire technologies.
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