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In this paper, we propose a sub-1-V nanopower current reference based on dual-threshold voltage current mirror stages, used to compensate the temperature dependence of the current of a diode-connected transistor operating in deep subthreshold region. The proposed solution has been designed in a 0.18 μm CMOS technology and analyzed through circuit simulations. Simulation results show an output current...
We propose a subthreshold CMOS voltage reference operating with a minimum supply voltage of only 150 mV, which is three times lower than the minimum value presently reported in the literature. The generated reference voltage is only 17.69 mV. This result has been achieved by introducing a temperature compensation technique that does not require the drain–source voltage of each MOSFET to be larger...
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