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Experimental evidence confirming single-event transient generation from ion strikes directly into the drain region of an InAlSb/InAs/AlGaSb high electron mobility transistor is presented. A rectifying drain alloy-buffer layer interface is shown to be responsible for the generation of single-event transients far from the active regions of the device. Charge collection in these depletion-mode devices...
InAs-AlSb HEMTs stressed with hot electrons may exhibit shifts in the peak transconductance towards more negative gate voltages. The devices are most degradation prone in operating conditions with high vertical gate field. Annealing trends and theoretical calculations indicate the possible role of an oxygen-induced metastable defect.
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