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In this study, we propose a simple method to design binary masks (BIMs) at an extreme ultraviolet (EUV) wavelength for lithography and at a deep ultraviolet (DUV) wavelength for inspection. We study the optimum optical constant (refractive index and extinction coefficient) for low reflectance and categorize SnTe, ZnTe, TaN, and TaBN materials as absorber materials and ITO, Al2O3 as antireflection...
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