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Recently we reported the development of new dual beam laser spike annealing system that offers flexible temperature profiles and a broad range of process parameters. For example, the dwell time can be varied from a few hundred microseconds to several tens of milliseconds, while simultaneously allowing the substrate temperature to be lowered significantly to accommodate silicide processes. Short anneal...
A new dual-beam laser spike annealing (DB-LSA) technology is developed to expand the application space of non-melt laser annealing. In the standard LSA configuration, a single narrow laser beam is used to heat the wafer surface from substrate temperature to the peak annealing temperature close to silicon melt. In DB-LSA, a second wide laser beam is incorporated to preheat the wafer. The dual beam...
LSA was first introduced into mainstream semiconductor manufacturing for logic IC's at the 65 nm node, continuing the natural evolution of semiconductor thermal processing to higher temperatures (>1200??C) and shorter times (100's of microseconds). The initial application was a simple one-step LSA to assist spike-RTA in dopant activation of the source/drain and polysilicon gate regions. Since then,...
Ultra shallow junctions are increasingly important to overcome short channel effects, and sub-millisecond annealing offers the ability to control diffusion while simultaneously offering high activation levels. The ultra-fast annealing process needs tight uniformity control to provide consistent device performance across the wafer. The ultratech LSA-100A system features scan pattern overlap flexibility...
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